Room-temperature vacancy migration in crystalline Si from an ion-implanted surface layer

Journal of Applied Physics

Volumn 86, Issue 9, 1999, Pages 4861-4864

  Nylandsted Larsen, Arne ^a   Christensen, Carsten ^b   Wulff Petersen, Jon ^b  

^a AARHUS UNIVERSITY   (Denmark)

^b TECHNICAL UNIVERSITY OF DENMARK   (Denmark)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0008862973     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.371453     Document Type: Article

References (15)

1. C. Christensen, J. Wulff Petersen, and A. Nylandsted Larsen, Appl. Phys. Lett. 51, 1426 (1992).
2. K. Kyllesbech Larsen, V. Privitera, S. Coffa, F. Priolo, S. U. Campisano, and A. Carnera, Phys. Rev. Lett. 76, 1493 (1996).
3. S. Coffa and S. Libertino, Appl. Phys. Lett. 73, 3369 (1998).
4. See, e.g., V. Privitera, S. Coffa, F. Priolo, and E. Rimini, Riv. Nuovo Cimento 21, 1 (1998), and references therein.
5. G. D. Watkins, J. Phys. Soc. Jpn. 18, 22 (1963).
6. J. A. Van Vechten, Phys. Rev. B 10, 1482 (1974).
7. G. H. Gilmer, T. Diaz De La Rubia, D. M. Stock, and M. Jaraiz, Nucl. Instrum. Methods Phys. Res. B 102, 247 (1995).
8. G. D. Watkins, in Electronic Structure and Properties of Semiconductors, edited by W. Schröter, Materials Science and Technology, a Comprehensive Treatment (VCH, Weinheim, 1991), Vol. 4, p. 105.
9. Transport of Ions in Matter, version 95; J. P. Biersack and L. G. Haggmark, Nucl. Instrum. Methods 174, 257 (1980).
10. C. V. Budtz-Jøgensen, P. Kringhøj, A. Nylandsted Larsen, and N. V. Abrosimov, Phys. Rev. B 58, 1110 (1998).
11. G. D. Watkins and J. W. Corbett, Phys. Rev. 5A, 1359 (1964).
12. L. C. Kimerling, H. M. DeAngelis, and J. W. Diebold, Solid State Commun. 16, 171 (1975).
13. A. O. Evwaraye, J. Appl. Phys. 48, 734 (1977).
14. Annealing experiments on irradiation-induced E-centers have indicated that they diffuse to sinks in their neutral charge state (See Refs. 11-13).
15. E. G. Sieverts and C. A. J. Ammerlaan, Inst. Phys. Conf. Ser. 31, 213 (1977).