High resolution DLTS of hydrogen reactions with defects in erbium-implanted silicon

Materials Science and Engineering: B

Volumn 81, Issue 1-3, 2001, Pages 77-79

  Kan, P Y Y ^a   Abd El Rahman, K F ^a   Abdelgader, N ^a   Evans Freeman, J H ^a   Peaker, A R ^a  

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

Author keywords

Defect; Erbium; Hydrogen; Implantation; LDLTS; Silicon

Indexed keywords

CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON IRRADIATION; ERBIUM; ETCHING; HYDROGEN; ION IMPLANTATION;

WET CHEMICAL ETCHING;

SEMICONDUCTING SILICON;

EID: 0035942370     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(00)00740-6     Document Type: Article

References (7)