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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 186, Issue 1-4, 2002, Pages 41-45

High resolution Laplace DLTS studies of defects in ion-implanted silicon

(4) Evans Freeman, J H a Abdelgader, N a Kan, P Y Y a Peaker, A R a

a UNIVERSITY OF MANCHESTER (United Kingdom)

Author keywords

Defects; Interstitials; Ion implantation; Laplace DLTS; Silicon; Vacancies

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; PROTON IRRADIATION; SEMICONDUCTING SILICON; SPECTRUM ANALYSIS; THERMAL EFFECTS;

INTERSTITIALS;

ION IMPLANTATION;

EID: 0036134705 PISSN: 0168583X EISSN: None Source Type: Journal
DOI: 10.1016/S0168-583X(01)00870-9 Document Type: Article

Times cited : (6)

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