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Volumn 61, Issue 7, 2000, Pages 4659-4666

Identification of the oxygen-vacancy defect containing a single hydrogen atom in crystalline silicon

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Indexed keywords


EID: 0001054368     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.61.4659     Document Type: Article
Times cited : (33)

References (20)
  • 8
    • 0031635312 scopus 로고    scopus 로고
    • See, e.g., Y. Tokuda and H. Shimada, in Hydrogen in Semiconductors and Metals, edited by N. H. Nickel, W. B. Jackson, R. C. Bowman, and R. G. Leisure, MRS Symposia Proceedings No. 513 (Materials Research Society, Warrendale, PA, 1998), p. 363.
    • (1998) MRS Symposia Proceedings , pp. 363
    • Tokuda, Y.1    Shimada, H.2
  • 10
    • 85037876442 scopus 로고    scopus 로고
    • R. Jones (private communication).
    • Jones, R.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.