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Journal of Crystal Growth

Volumn 279, Issue 3-4, 2005, Pages 425-432

Investigation on small growth pits in 4H silicon carbide epilayers

(4) Ma, Xianyun a Chang, Hsuehrong b Zhang, Qingchun b Sudarshan, Tangali c

a MaxMile Technologies LLC (United States)

b Rockwell Scientific (United States)

c The Department of Mechanical Engineering (United States)

Author keywords

A1. Characterization; A1. Defects; A1. Growth pits; A1. Surface defects; B1. SiC epilayer; B1. Silicon carbide

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHARACTERIZATION; CRYSTAL GROWTH; CRYSTALLOGRAPHY; DEFECTS; GRAIN BOUNDARIES; POLARIZATION;

GROWTH PITS; NANO-CORES; SIC EPILAYERS; SURFACE DEFECTS;

SILICON CARBIDE;

EID: 18544369766 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2005.02.055 Document Type: Article

Times cited : (13)

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