Material defects in 4H-silicon carbide diodes

Journal of Applied Physics

Volumn 93, Issue 1, 2003, Pages 611-618

  Zimmermann, Uwe ^a   Österman, John ^a   Kuylenstierna, Dan ^a,d   Hallén, Anders ^a   Konstantinov, Andrey O ^b   Vetter, William M ^c   Dudley, Michael ^c  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b ACREO AB   (Sweden)

^c Stony Brook University   (United States)

^d CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE COUPLED DEVICES; CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTROLUMINESCENCE; ELECTRON BEAMS; EPITAXIAL GROWTH; INDUCED CURRENTS; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDE; SYNCHROTRON RADIATION;

MICROPLASMA CURRENT; X RAY TOPOGRAPHY;

SEMICONDUCTOR DIODES;

EID: 0037257909     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1525065     Document Type: Article

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