Impact of material defects on SiC schottky barrier diodes

Materials Science Forum

Volumn 389-393, Issue , 2002, Pages 1133-1136

  Morisette, D T ^a   Cooper, J A ^b  

^a OptoLynx Inc   (United States)

^b PURDUE UNIVERSITY   (United States)

Author keywords

Defects; Dislocation; Leakage current; Schottky diodes; SiC

Indexed keywords

DEFECTS; DIODES; DISLOCATIONS (CRYSTALS); LEAKAGE CURRENTS; SILICON CARBIDE; SILICON WAFERS; CRYSTAL DEFECTS; ELECTRIC PROPERTIES;

ELECTRICAL BEHAVIORS; ELECTRICAL CHARACTERISTIC; HIGH VOLTAGE; IMPACT DEVICE; MATERIAL DEFECT; SCHOTTKY BARRIER DIODES (SBDS); SCHOTTKY DIODES; STATISTICAL ERRORS; MATERIAL DEFECTS;

SCHOTTKY BARRIER DIODES;

EID: 0036436633     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.389-393.1133     Document Type: Conference Paper

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