SCOPUS 정보 검색 플랫폼

Materials Research Society Symposium - Proceedings

Volumn 622, Issue , 2000, Pages T121-T1211

Investigations of non-micropipe x-ray imaged crystal defects in sic devices

(7) Neudeck, P G a Kuczmarski, M A a Dudley, M b Vetter, W M b Su, H B b Keys, L J a Trunek, A J c

a NASA GLENN RESEARCH CENTER (United States)

b Stony Brook University (United States)

c Akima Corporation (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; COMPUTER SIMULATION; CRYSTAL DEFECTS; ELECTRIC PROPERTIES; EPITAXIAL GROWTH; OPTICAL MICROSCOPY; SILICON CARBIDE; X RAY ANALYSIS;

MICROPLASMA POWER;

SEMICONDUCTOR DEVICES;

EID: 0034431187 PISSN: 02729172 EISSN: None Source Type: Journal
DOI: 10.1557/proc-622-t1.2.1 Document Type: Article

Times cited : (8)

References (15)

1
- 3743130700
- Silicon Carbide, III-Nitrides, and Related Materials, ed. G. Pensl, H. Morkoc, B. Monemar, and E. Janzen, (Trans Tech)
- (1998) Materials Science Forum , vol.264-268 , pp. 3-8
- Tsvetkov, V.F.¹ Glass, R.C.² Henshall, D.³ Asbury, D.A.⁴ Carter, C.H.⁵

2
- 0031648293
- Silicon Carbide, III-Nitrides, and Related Materials, ed. G. Pensl, H. Morkoc, B. Monemar, and E. Janzen (Trans Tech)
- (1998) Materials Science Forum , vol.264-268 , pp. 429-432
- Si, W.¹ Dudley, M.²

3
- 0031344321
- Power Semiconductor Materials and Devices, ed. S. J. Pearton, R. J. Shul, E. Wolfgang, F. Ren, and S. Tenconi (Warrandale, PA)
- (1998) Mat. Res. Soc. Symp. Proc. , vol.483 , pp. 285-294
- Neudeck, P.G.¹ Huang, W.² Dudley, M.³

4
- 0033100172
- (1999) IEEE Trans. Electron Devices , vol.46 , pp. 478-484
- Neudeck, P.G.¹ Huang, W.² Dudley, M.³

5
- 0033097597
- (1999) IEEE Trans. Electron Devices , vol.46 , pp. 485-492
- Neudeck, P.G.¹ Fazi, C.²

6
- 85009895871
- FLUENT, Fluent, Inc., Lebanon, NH, USA

7
- 3743112674
- Silicon Carbide, III-Nitrides, and Related Materials, ed. G. Pensl, H. Morkoc, B. Monemar, and E. Janzen (Trans Tech)
- (1998) Materials Science Forum , vol.264-268 , pp. 623-626
- Muller, S.G.¹ Eckstein, R.² Fricke, J.³ Hofmann, D.⁴ Hofmann, R.⁵ Horn, R.⁶ Mehling, H.⁷ Nilsson, O.⁸

8
- 84914240091
- Physics of III-V Compounds, edited by R. K. Willardson and A. C. Beer (Academic Press)
- (1968) Semiconductors and Semimetals , vol.4 , pp. 307-325
- Chynoweth, A.G.¹

9
- 0000038064
- (1998) J. Electronic Materials , vol.27 , Issue.4 , pp. 335-341
- Konstantinov, A.O.¹ Wahab, Q.² Nordell, N.³ Lindefelt, U.⁴

10
- 0000272949
- Wide-Bandgap Semiconductors for High Power, High Frequency and High Temperature, ed. by S. Denbaars, M. S. Shur, J. Palmour, and M. Spencer (Warrendale, PA)
- (1998) Mat. Res. Soc. Symp. Proc. , vol.512 , pp. 151-156
- Zimmermann, U.¹

11
- 0004140373
- The PN junction diode
- 2nd. ed., ed. G. W. Neudeck and R. F. Pierret (Addison-Wesley)
- (1989) Modular Series on Solid State Devices , vol.2
- Neudeck, G.W.¹

12
- 32644436537
- Silicon Carbide and Related Materials 1999, ed. C. H. Carter, Jr., R. P. Devaty and G. S. Rohrer, Trans Tech
- (2000) Materials Science Forum , vol.338-342
- Keskar, N.¹ Shenai, K.² Neudeck, P.³

13
- 0000331734
- Silicon Carbide and Related Materials 1999, ed. R. P. Devaty and G. S. Rohrer ed. C. H. Carter, Jr., R. P. Devaty and G. S. Rohrer, Trans Tech
- (2000) Materials Science Forum , vol.338-342
- Schnabel, C.M.¹ Tabib-Azar, M.² Neudeck, P.G.³ Bailey, S.G.⁴ Su, H.B.⁵ Dudley, M.⁶

14
- 0003699406
- Cree Research, Inc., Durham, NC, USA, August
- (1999) Silicon Carbide Product Specifications

15
- 0031484703
- (1997) Phys. Stat. Sol. (b) , vol.202 , Issue.1 , pp. 529-548
- Powell, J.A.¹ Larkin, D.J.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.