Strain relaxation behavior of InxGa1-xAs quantum wells on vicinal GaAs (111)B substrates

Applied Physics Letters

Volumn 80, Issue 9, 2002, Pages 1541-1543

  Gutierrez M ^a   Gonzalez D ^a   Aragon G ^a   Garcia R ^a   Hopkinson, M ^b   Sanchez J J ^c   Izpura, I ^c  

^a UNIVERSITY OF CÁDIZ   (Spain)

^b UNIVERSITY OF SHEFFIELD   (United Kingdom)

^c UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CRITICAL LAYER THICKNESS; DISLOCATION SOURCES; GAAS; GLIDE PLANES; INGAAS/GAAS; INTERFACE PLANES; PLASTIC RELAXATION; RELAXATION BEHAVIORS; RELAXATION MECHANISM; STRAINED LAYERS; THREE-DIMENSIONAL GROWTH;

GALLIUM; HETEROJUNCTIONS; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 79955999056     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1455691     Document Type: Article

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