SCOPUS 정보 검색 플랫폼

Volumn 30, Issue 4, 1999, Pages 363-366

Optical investigation of the relaxation process in InGaAs/GaAs single strained quantum wells grown on (001) and (111)B GaAs substrates

(5) Sanchez J J a Tijero, J M G b Hernando, J a Sanchez Rojas J L a Izpura, I a

a UNIVERSIDAD POLITÉCNICA DE MADRID (Spain)

b UNIVERSIDAD POLITÉCNICA DE MADRID (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTATIONAL METHODS; HETEROJUNCTIONS; INTEGRATED OPTOELECTRONICS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; RELAXATION PROCESSES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SUBSTRATES;

CRITICAL LAYER THICKNESS (CLT); SINGLE STRAINED QUANTUM WELLS (SSQW);

SEMICONDUCTOR QUANTUM WELLS;

EID: 0345149477 PISSN: 00262692 EISSN: None Source Type: Journal
DOI: 10.1016/S0026-2692(98)00136-0 Document Type: Article

Times cited : (11)

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