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Volumn 270, Issue 1-2, 2004, Pages 62-68

Structural and optical quality of InGaAsN quantum wells grown on misoriented GaAs (1 1 1)b substrates by molecular beam epitaxy

(9) Miguel Sanchez J a Hopkinson, M b Gutierrez M b Navaretti, P b Liu, H Y b Guzman A a Ulloa, J M a Hierro, A a Munoz E a

a UNIVERSIDAD POLITÉCNICA DE MADRID (Spain)

b UNIVERSITY OF SHEFFIELD (United Kingdom)

Author keywords

A1. Atomic force microscopy; A3. Molecular beam epitaxy; B2. Semiconducting III V materials; B3. Light emitting diodes

Indexed keywords

ARSENIC; ATOMIC FORCE MICROSCOPY; HIGH ENERGY ELECTRON DIFFRACTION; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; NITROGEN; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

CRYSTAL QUALITY; MISORIENTATIONS; OPTICAL SPECTRUM; SEMICONDUCTING III-V MATERIALS;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 4344679366 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2004.06.022 Document Type: Article

Times cited : (9)

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