Influence of substrate misorientation and growth temperature on N incorporation in InGaAsN/GaAs quantum wells grown on (1 1 1) B GaAs

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 23, Issue 3-4 SPEC. ISS., 2004, Pages 356-361

  Miguel Sanchez J ^a   Guzman A ^a   Ulloa, J M ^a   Hierro, A ^a   Munoz E ^a  

^a Ciudad Universitaria s n   (Spain)

Author keywords

III V semiconductor; Molecular beam epitaxy; N dilute alloys; Quantum wells

Indexed keywords

CONCENTRATION (PROCESS); GALLIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; OPTIMIZATION; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS; TEMPERATURE DISTRIBUTION; THERMOCOUPLES; THERMODYNAMICS;

CRYSTAL QUALITY; OPTICAL QUALITY; SUBSTRATE MISORIENTATION; TEMPERATURE GRADIENT;

NITROGEN;

EID: 3142756383     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2003.11.282     Document Type: Conference Paper

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