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Journal of Crystal Growth

Volumn 278, Issue 1-4, 2005, Pages 259-263

Mechanism of photoluminescence blue shift in InGaAsN/GaAs quantum wells during annealing

(4) Peng, C S a Liu, H F a Konttinen, J a Pessa, M a

a TAMPERE UNIVERSITY OF TECHNOLOGY (Finland)

Author keywords

A1. Inter diffusion; A1. Short range ordered; A3. Molecular beam epitaxy; A3. Quantum well; B1. Dilute nitride

Indexed keywords

ANNEALING; COST EFFECTIVENESS; ELECTRONIC STRUCTURE; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS; TELECOMMUNICATION; THERMAL EFFECTS;

BANDGAPS; DILUTE NITRIDE; INTER-DIFFUSION; SHORT-RANGE ORDERED;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 18444396925 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2005.01.020 Document Type: Conference Paper

Times cited : (15)

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