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Journal of Applied Physics

Volumn 80, Issue 1, 1996, Pages 156-160

The effect of excess gallium vacancies in low-temperature GaAs/AlAs/ GaAs:Si heterostructures

(3) Kisielowski, C a,b Calawa, A R c Liliental Weber, Z b

a UNIVERSITY OF CALIFORNIA (United States)

b LAWRENCE BERKELEY NATIONAL LABORATORY (United States)

c MASSACHUSETTS INSTITUTE OF TECHNOLOGY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 5244240500 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.362742 Document Type: Article

Times cited : (17)

References (16)

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