Annealing effects on optical and structural properties of 1.3-μm GalnNAs/GaAs quantum-well samples capped with dielectric layers

Applied Physics Letters

Volumn 84, Issue 4, 2004, Pages 478-480

  Liu, H F ^a   Peng, C S ^a   Pavelescu, E M ^a   Jouhti, T ^a   Karirinne, S ^a   Konttinen, J ^a   Pessa, M ^a  

^a TAMPERE UNIVERSITY OF TECHNOLOGY   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DIELECTRIC MATERIALS; HETEROJUNCTIONS; INTERDIFFUSION (SOLIDS); MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SILICA; STOICHIOMETRY; X RAY DIFFRACTION ANALYSIS;

DEFECT DENSITY; STRUCTURAL PROPERTIES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 1242329869     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1644028     Document Type: Article

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