SCOPUS 정보 검색 플랫폼

Volumn 273-274, Issue , 1999, Pages 722-724

Native point defect analysis in non-stoichiometric GaAs: An annealing study

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DIFFUSION IN SOLIDS; ELECTRONIC PROPERTIES; MOLECULAR BEAM EPITAXY; POINT DEFECTS; THERMODYNAMIC STABILITY;

NATIVE POINT DEFECTS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0033331199 PISSN: 09214526 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-4526(99)00621-3 Document Type: Article

Times cited : (9)

References (11)

1
- 21544438546
- M. Kaminska, Z. Liliental-Weber, E.R. Weber, T. George, J.B. Kortright, F.W. Smith, B.Y. Tsaur, A.R. Calawa, Appl. Phys. Lett. 54 (1989) 1881.
- (1989) Appl. Phys. Lett. , vol.54 , pp. 1881
- Kaminska, M.¹ Liliental-Weber, Z.² Weber, E.R.³ George, T.⁴ Kortright, J.B.⁵ Smith, F.W.⁶ Tsaur, B.Y.⁷ Calawa, A.R.⁸

2
- 21544472458
- A.C. Warren, J.M. Woodall, J.L. Freeouf, D. Grischkowsky, D.T. Mclnturff, M.R. Melloch, N. Otsuka, Appl. Phys. Lett. 57 (1990) 1331.
- (1990) Appl. Phys. Lett. , vol.57 , pp. 1331
- Warren, A.C.¹ Woodall, J.M.² Freeouf, J.L.³ Grischkowsky, D.⁴ Mclnturff, D.T.⁵ Melloch, M.R.⁶ Otsuka, N.⁷

3
- 3643104632
- Z. Liliental-Weber, Mater. Res. Soc. Symp. Proc. 198 (1990) 371.
- (1990) Mater. Res. Soc. Symp. Proc. , vol.198 , pp. 371
- Liliental-Weber, Z.¹

4
- 0028761604
- T.W. Fan, J.B. Liang, H.J. Deng, R.G. Li, Z.G. Wang, W. Gen, J. Crystal. Growth 143 (1994) 354.
- (1994) J. Crystal. Growth , vol.143 , pp. 354
- Fan, T.W.¹ Liang, J.B.² Deng, H.J.³ Li, R.G.⁴ Wang, Z.G.⁵ Gen, W.⁶

5
- 0025256804
- B.J.F. Lin, C.P. Kocot, D.E. Mars, R. Jaeger, IEEE Trans. Electron Dev. ED37 (1990) 46.
- (1990) IEEE Trans. Electron Dev. , vol.ED37 , pp. 46
- Lin, B.J.F.¹ Kocot, C.P.² Mars, D.E.³ Jaeger, R.⁴

6
- 0000363390
- D.E. Bliss, W. Walukiewicz, J.W. Ager, E.E. Haller, K.T. Chan, S. Tanigawa, J. Appl. Phys. 71 (1992) 1699.
- (1992) J. Appl. Phys. , vol.71 , pp. 1699
- Bliss, D.E.¹ Walukiewicz, W.² Ager, J.W.³ Haller, E.E.⁴ Chan, K.T.⁵ Tanigawa, S.⁶

7
- 0027850243
- D.E. Bliss, W. Walukiewicz, E.E. Haller, J. Electron. Mater. 22 (1993) 1401.
- (1993) J. Electron. Mater. , vol.22 , pp. 1401
- Bliss, D.E.¹ Walukiewicz, W.² Haller, E.E.³

8
- 0031343133
- G. Davies, M.H. Nazare (Eds.), Proceedings of the 20th International Conference on Defects in Semiconductors (ICDS-19)
- P. Specht, S. Jeong, H. Sohn, M. Luysberg, A. Prasad, J. Gebauer, R. Krause-Rehberg, E.R. Weber, in: G. Davies, M.H. Nazare (Eds.), Proceedings of the 20th International Conference on Defects in Semiconductors (ICDS-19), Mater. Sci. Forum 258-63 (1997) 951.
- (1997) Mater. Sci. Forum , vol.258 , Issue.63 , pp. 951
- Specht, P.¹ Jeong, S.² Sohn, H.³ Luysberg, M.⁴ Prasad, A.⁵ Gebauer, J.⁶ Krause-Rehberg, R.⁷ Weber, E.R.⁸

9
- 0003121364
- G.M. Martin, Appl. Phys. Lett. 39 (1981) 747.
- (1981) Appl. Phys. Lett. , vol.39 , pp. 747
- Martin, G.M.¹

10
- 0026123122
- D.M. Hoffmann, K. Krambrock, B.K. Meyer, J.M. Spaeth, Semicond. Sci. Technol. 6 (1991) 170.
- (1991) Semicond. Sci. Technol. , vol.6 , pp. 170
- Hoffmann, D.M.¹ Krambrock, K.² Meyer, B.K.³ Spaeth, J.M.⁴

11
- 0003903556
- Springer, Heidlberg
- R. Krause-Rehberg, H.S. Leipuer, in: Positron Annihilation in Semiconductors, Springer, Heidlberg, 1999.
- (1999) Positron Annihilation in Semiconductors
- Krause-Rehberg, R.¹ Leipuer, H.S.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.