Interfacial reactions in the Si/TaC/Cu system

Microelectronic Engineering

Volumn 71, Issue 3-4, 2004, Pages 301-309

  Laurila, T ^a   Molarius, J ^b   Kivilahti, J K ^a  

^a AALTO UNIVERSITY   (Finland)

^b VTT TECHNICAL RESEARCH CENTRE OF FINLAND   (Finland)

Author keywords

Diffusion barrier; Tantalum carbide; Thermodynamics

Indexed keywords

AMORPHOUS MATERIALS; ANNEALING; CRYSTALLINE MATERIALS; INTERFACES (MATERIALS); METALLIZING; PRECIPITATION (CHEMICAL); TANTALUM CARBIDE; TERNARY SYSTEMS; THERMODYNAMICS; TRANSMISSION ELECTRON MICROSCOPY; VLSI CIRCUITS;

DIFFUSION BARRIER; INTERFACIAL REACTIONS;

MICROELECTRONIC PROCESSING;

EID: 1842740738     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2004.02.002     Document Type: Article

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