The effectiveness of Ta prepared by ion-assisted deposition as a diffusion barrier between copper and silicon

Journal of the Electrochemical Society

Volumn 144, Issue 5, 1997, Pages 1807-1812

  Kang, Byoung Sun ^a   Lee, Sung Man ^a   Kwak, Joon Seop ^b   Yoon, Dong Soo ^b   Baik, Hong Koo ^b  

^a Kangwon National University   (South Korea)

^b Yonsei University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; DEPOSITION; ION BOMBARDMENT; METALLIC FILMS; MICROSCOPIC EXAMINATION; X RAY DIFFRACTION ANALYSIS;

ION ASSISTED DEPOSITION; SHEET RESISTANCE; TANTALUM FILMS;

TANTALUM;

EID: 0031139284     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837684     Document Type: Article

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