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Volumn 41, Issue 12B, 2002, Pages L1452-L1454

Dependence of the surface, the structural, and the optical properties on the thickness of the AIN buffer layer for GaN epilayers grown on sapphire substrates

(3) Jeon, Hee Chang a Kang, Taewon a Kim, Tae Whan b

a Dongguk University (South Korea)

b Kwangwoon University (South Korea)

Author keywords

AIN buffer layer; GaN epilayer; Structural and optical properties; Surface

Indexed keywords

ATOMIC FORCE MICROSCOPY; BUFFER LAYERS; CRYSTAL ATOMIC STRUCTURE; EPILAYERS; EPITAXIAL GROWTH; GALLIUM NITRIDE; OPTICAL WAVEGUIDES; OPTOELECTRONIC DEVICES; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR QUANTUM WELLS; SURFACES;

ACTIVE LAYER; BLUE-GREEN REGION; DOUBLE CRYSTAL ROCKING CURVES; GAN EPILAYERS; PHOTOLUMINESCENCE MEASUREMENTS; PL MEASUREMENTS; SAPPHIRE SUBSTRATES; STRUCTURAL AND OPTICAL PROPERTIES;

OPTICAL PROPERTIES;

EID: 1842626120 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.41.L1452 Document Type: Article

Times cited : (3)

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