SCOPUS 정보 검색 플랫폼

Materials Science and Engineering B

Volumn 50, Issue 1-3, 1997, Pages 161-164

Comparison of luminescence and physical morphologies of GaN epilayers

(5) Trager Cowan, C a Middleton, P G a O'Donnell, K P a Clur, S b Briot, O b

a UNIVERSITY OF STRATHCLYDE (United Kingdom)

b CNRS (France)

Author keywords

Cathodoluminescence; GaN; Imaging; Morphology; Photoluminescence

Indexed keywords

CATHODOLUMINESCENCE; EMISSION SPECTROSCOPY; IMAGING TECHNIQUES; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; OPTICAL MICROSCOPY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; THIN FILMS;

GALLIUM NITRIDE EPILAYERS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0345202086 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(97)00156-6 Document Type: Article

Times cited : (4)

References (10)

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4
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5
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.