Growth of thick GaN films on RF sputtered AIN buffer layer by hydride vapor phase epitaxy

Journal of Electronic Materials

Volumn 26, Issue 8, 1997, Pages 898-902

  Lee, Heon ^a,c   Yuri, Masaaki ^a   Ueda, Tetsuzo ^a   Harris, James S ^a   Sin, Kyusik ^b  

^a STANFORD UNIVERSITY   (United States)

^b Stanford University   (United States)

^c LUCENT TECHNOLOGIES   (United States)

Author keywords

AlN buffer layer; GaCl3 GaN film; Hydride vapor phase epitaxy (HVPE); Minimum RBS channeling; NH3; Rutherford backscattering spectroscopy (RBS)

Indexed keywords

EID: 0042722821     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-997-0271-9     Document Type: Article

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