Selective etching of GaN over AlN using an inductively coupled plasma and an O2/Cl2/Ar chemistry

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 18, Issue 3, 2000, Pages 879-881

  Smith, S A ^b   Lampert, W V ^b   Rajagopal, P ^a   Banks, A D ^a   Thomson, D ^a   Davis, R F ^a  

^a North Carolina State University   (United States)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; CHLORINE; OXYGEN; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS;

ALUMINUM NITRIDE; GALLIUM NITRIDE; INDUCTIVELY COUPLED PLASMAS;

PLASMA ETCHING;

EID: 0009707048     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.582270     Document Type: Article

References (9)

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4. S. A. Smith, W. V. Lampert, P. Rajagopal, D. Thomson, and R. F. Davis (unpublished).
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8. A. D. Hanser, C. A. Wolden, and R. F. Davis, J. Electron. Mater. 27, 238 (1998).
9. M. D. Bremser, W. G. Perry, T. Zheleva, N. V. Edwards, O. H. Nam, N. Parikh, D. E. Aspnes, and R. F. Davis, MRS Internet J. Nitride Semicond. Res. 1, 8 (1996).