Growth of AlxGa1 - xN (0 ≦ x ≦ 0.2) and fabrication of AlGaN/GaN superlattice by RF-source MBE

Journal of Crystal Growth

Volumn 189-190, Issue , 1998, Pages 114-118

  Nozawa, Kazuhiko ^a   Maeda, Narihiko ^a   Hirayama, Yoshiro ^a   Kobayashi, Naoki ^a  

^a NTT Basic Research Laboratories   (Japan)

Author keywords

AlGaN; GaN; MBE; Superlattice; Transmission electron microscopy; X ray diffraction

Indexed keywords

MOLECULAR BEAM EPITAXY; NITRIDES; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR SUPERLATTICES; TRANSMISSION ELECTRON MICROSCOPY; X RAY CRYSTALLOGRAPHY;

TWO STEP GROWTH;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032089884     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00186-9     Document Type: Article

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