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Volumn 93, Issue 1-3, 2002, Pages 31-34
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Growth and characterization of high-quality 10-period AlGaN/GaN Bragg reflectors grown by molecular beam epitaxy
a
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Author keywords
Bragg reflector; Molecular beam epitaxy; Nitrides; Reflectivity
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Indexed keywords
ATOMIC FORCE MICROSCOPY;
CAVITY RESONATORS;
COMPUTER SIMULATION;
CRACKS;
GALLIUM NITRIDE;
LIGHT EMITTING DIODES;
MIRRORS;
MOLECULAR BEAM EPITAXY;
OPTICAL COMMUNICATION;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTOR SUPERLATTICES;
STRUCTURAL ANALYSIS;
SURFACE ROUGHNESS;
TRANSMISSION ELECTRON MICROSCOPY;
DISTRIBUTED BRAGG REFLECTORS (DBR);
HETEROJUNCTIONS;
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EID: 0037198523
PISSN: 09215107
EISSN: None
Source Type: Journal
DOI: 10.1016/S0921-5107(02)00033-8 Document Type: Conference Paper |
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Times cited : (3)
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References (13)
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