Strain, morphological, and growth-mode changes in AlGaN single layers at high AlN mole fraction

Journal of Crystal Growth

Volumn 241, Issue 4, 2002, Pages 535-542

  Fedler, F ^a   Hauenstein, R J ^b   Klausing, H ^a   Mistele, D ^a   Semchinova, O ^a   Aderhold, J ^a   Graul, J ^a  

^a LEIBNIZ UNIVERSITY HANNOVER   (Germany)

^b OKLAHOMA STATE UNIVERSITY   (United States)

Author keywords

A1. Crystal morphology; A1. High resolution X ray diffraction; B1. Nitrides

Indexed keywords

ALUMINUM COMPOUNDS; ATOMIC FORCE MICROSCOPY; CHARACTERIZATION; COMPOSITION EFFECTS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; NITRIDES; SAPPHIRE; STRAIN; SURFACE ROUGHNESS; X RAY DIFFRACTION ANALYSIS;

CRYSTAL MORPHOLOGY;

CRYSTAL GROWTH;

EID: 0036609163     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01324-6     Document Type: Article

References (18)