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Materials Science Forum

Volumn 457-460, Issue II, 2004, Pages 1269-1274

A long-term reliability of thermal oxides grown on n-type 4H-SiC wafer

(5) Senzaki, J a Goto, M b Kojima, K a Yamabe, K b Fukuda, K a

a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

b UNIVERSITY OF TSUKUBA (Japan)

Author keywords

4H SiC; Dielectric Breakdown; Metal Impurity; MOS Reliability; Surface Morphology; Thermal Oxide

Indexed keywords

CRYSTAL DEFECTS; DIELECTRIC DEVICES; MORPHOLOGY; MOS CAPACITORS; MOSFET DEVICES; SURFACE ROUGHNESS;

4H-SIC; DIELECTRIC BREAKDOWN; METAL IMPURITY; MOS RELIABILITY; THERMAL OXIDES;

SILICON CARBIDE;

EID: 8744291027 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/msf.457-460.1269 Document Type: Conference Paper

Times cited : (5)

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