Highly reliable SiOF film formation by ECR-CVD using SiF2H2

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1996, Pages 114-115

  Fukuda, Takuya ^a   Hosokawa, Takashi ^a   Nakamura, Yoshitaka ^a   Katoh, Kiyotaka ^a   Kobayashi, Nobuyoshi ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CHEMICAL VAPOR DEPOSITION; DEPOSITION; DESORPTION; ELECTRIC PROPERTIES; ELECTRON CYCLOTRON RESONANCE; MASS SPECTROMETRY; MOS DEVICES; PERMITTIVITY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR PLASMAS;

ALUMINUM INTERCONNECTS; CORROSION FREE PROCESS; DEEP SUBMICRON MOS DEVICES; ELECTRICAL DEGRADATION; GAS DESORPTION; INTERMETAL DIELECTRICS; MOS CHARACTERISTICS; THERMAL DESORPTION MASS SPECTROSCOPY; TRAPPED CHARGES;

DIELECTRIC FILMS;

EID: 0029714799     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)