Options for CVD of dielectrics include low-k materials

Semiconductor International

Volumn 21, Issue 6, 1998, Pages 139-144

  Baliga, John ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; DIELECTRIC MATERIALS; GLASS; OZONE; PLASMA APPLICATIONS;

FLUOROSILICATE GLASS; HIGH DENSITY PLASMA CHEMICAL VAPOR DEPOSITION (HPD CVD);

CHEMICAL VAPOR DEPOSITION;

EID: 0032099781     PISSN: 01633767     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (6)

1. D.S. Armbrust, A.K. Stamper, L.A. Serianni, M.A. Trahan "Integration of HDPCVD FSG for 0.25 μm CMOS Technology," DUMIC, 1998.
2. L.Q. Qian, H.W. Fry, G. Nobinger, J.T. Pye, M.C. Schmidt, J. Casillas, M. Lieberman, "High Density Plasma Deposition and Deep Submicron Gap Fill with Low Dielectric Constant SiOF Films," DUMIC, 1995.
3. G. Cogin Schwartz, K.V. Srikrishnan, "Interlevel Dielectrics," Handbook of Semiconductor Interconnection Technology, Marcel Dekker, 1998.
4. H. Yang, T. Nguyen, Y. Ma, S.-T. Hsu "Significant Improvement of Thermal Stability on Low-k Fluorinated Amorphous Carbon: Two Approaches," DUMIC, 1998,
5. J. Gaynor, A. Ralston, "AF4 as a VLSI Interconnect Material," Semiconductor International, December 1997.
6. J. Wary, E. Olson, W. Beach, "Polymer Developed to be Interlayer Dielectric," Semiconductor International, June 1996.