The characterization of trimethylsilane based PE-CVD α-SiCO:H low-k films

Proceedings of the IEEE 2000 International Interconnect Technology Conference, IITC 2000

Volumn , Issue , 2000, Pages 52-54

  Wang, B K ^a   Loboda, M J ^a   Cerny, G A ^a   Schneider, R F ^a   Seifferly, J A ^a   Washer, T ^a  

^a DOW CORNING CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL ENGINEERING;

ELECTRICAL CHARACTERISTIC; FILM DENSITY; HIGH BREAKDOWN FIELDS; LOW-K FILMS; LOW-LEAKAGE CURRENT; PROCESS CONDITION; STRUCTURE OF FILMS; TRIMETHYLSILANE;

LEAKAGE CURRENTS;

EID: 84962881499     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2000.854279     Document Type: Conference Paper

References (6)

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4. P. Xu, K. Huang, A. Patel, S. Rathi, B. Tang, J. Ferguson, J. Huang, and C. Ngai, Proc. of IITC (1999), p. 109
5. Y. Uchida, K. Taguchi, T. Nagai, M. Matsumura, Proc. of DUMIC (1998), p. 46.
6. A. Grill and V. Patel, J. Appl. Phys., Vol. 85 (1999), p. 3314.