Comparison of κ<3 silicon oxide-based dielectric pre-copper metallization preclean processes using black diamond

10th Annual IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop, ASMC 1999

Volumn , Issue , 1999, Pages 299-303

  Mandal, R P ^a   Cheung, D ^a   Yau, Wai Fan ^a   Cohen, B ^a   Rengarajan, S ^a   Chou, E ^a  

^a APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; MANUFACTURE; OXIDE FILMS; PHOTORESISTS; SEMICONDUCTOR DEVICE MANUFACTURE;

COPPER DIFFUSION BARRIER; COPPER METALLIZATION; LOW DIELECTRIC CONSTANTS; NANOMETER-SIZED PORE; PHOTORESIST REMOVAL; PLASMA PROCESS; PRE-CLEAN PROCESS; REACTIVE PRE-CLEAN;

SILICON OXIDES;

EID: 0141570066     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ASMC.1999.798250     Document Type: Conference Paper

References (0)