A manufacturable and reliable low-k inter-metal dielectric using fluorinated oxide (FSG)

Proceedings of the IEEE 1999 International Interconnect Technology Conference, IITC 1999

Volumn , Issue , 1999, Pages 131-133

  Chang, W ^a   Jang, S M ^a   Yu, C H ^a   Sun, S C ^a   Liang, M S ^a  

^a TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; THERMODYNAMIC STABILITY;

CAP LAYERS; FILM PROPERTIES; HOT CARRIER RELIABILITY; INTER-METAL DIELECTRICS; INTERCONNECT PERFORMANCE; PRODUCT RELIABILITY;

LOW-K DIELECTRIC;

EID: 37349069460     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.1999.787099     Document Type: Conference Paper

References (3)

1. M.K. Jain et al. MRS. Proc. ULSI, 1997, p. 423,
2. rd DUMIC 1997, p. 13.
3. th Dry Proc. Symp. Proc. 1998, p. 167.