Fabrication of GaN films through reactive reconstruction of magnetron sputtered ZnO/Ga2O3

Journal of Central South University of Technology (English Edition)

Volumn 12, Issue 1, 2005, Pages 9-12

  Gao, Hai Yong ^a   Zhuang, Hui Zhao ^a   Xue, Cheng Shan ^a   Dong, Zhi Hua ^a   He, Jian Ting ^a   Liu, Yi An ^a   Wu, Yu Xin ^a   Tian, De Heng ^a  

^a SHANDONG NORMAL UNIVERSITY   (China)

Author keywords

Fabrication; Ga2O3 film; Nitriding; Radio frequency magnetron sputtering; ZnO buffer layer

Indexed keywords

COMPOSITION; CRYSTAL STRUCTURE; FILM PREPARATION; GALLIUM NITRIDE; MAGNETRON SPUTTERING; MORPHOLOGY; NITRIDING; PHOTOLUMINESCENCE; ZINC OXIDE;

BUFFER LAYERS; GALLIUM OXIDES; HEXAGONAL WURTZITE STRUCTURE; SILICON SUBSTRATES; TUBE QUARTZ FURNACE;

SEMICONDUCTING FILMS;

EID: 17644414144     PISSN: 10059784     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11771-005-0192-9     Document Type: Article

References (19)

1. Hamdani F, Yeadon M, David J S, et al. Microstructure and optical properties of epitaxial GaN on ZnO (001) grown by reactive molecular beam epitaxy[J]. J Appl Phys, 1998, 83(2): 983-990.
2. Nakamura S. The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes[J]. Science, 1998, 281: 956-961.
3. LIANG Chun-guang, ZHANG Ji. GaN: dawn of 3rd-generation-semiconductors[J]. Chinese Journal of Semiconductors, 1999, 20(2): 89-99. (in Chinese)
4. LU Min, FANG Hui-zhi, LU Shu, et al. Regrowing characteristic of GaN on etched pits by MOCVD[J]. Chinese Journal of Semiconductors, 2004, 25(4): 415-418. (in Chinese)
5. Weyher J L, Brown P D, Zauner A R A, et al. Morphological and structural characteristics of homoepitaxial GaN grown by metal organic chemical vapour deposition (MOCVD)[J]. Journal of Crystal Growth, 1999, 204: 419-428.
6. Rupp T, Henn G, Gross M. Laser-induced molecular beam epitaxy of group-III nitrides[J]. Appl Phys A, 1999, 69(S): 799-802.
7. YANG B, Brandt O, Trampert A, et al. Growth of cubic GaN on Si (001) by plasma-assisted MBE[J]. Applied Surface Science, 1998, 123-124: 1-6.
8. WANG D, Hiroyama Y, Tamura M, et al. Growth of high-quality cubic GaN on Si (001) coated with ultrathin flat SiC by plasma-assisted molecular-beam epitaxy[J]. Journal of Crystal Growth, 2000, 216(1-4): 44-50.
9. ZHANG Hao-xiang, YE Zhi-zhen, ZHAO Bing-hui. Investigation of preparation and properties of epitaxial growth GaN film on Si(111) substrate[J]. Journal of Crystal Growth, 2000, 210(4): 511-515.
10. Jin-Hyo B, Scott A U, Wilson H. Growth of hexagonal GaN thin films on Si(111) with cubic SiC buffer layers[J]. Journal of Crystal Growth, 1998, 190: 183-188.
11. ZHANG Bao-shun, WU Mo, CHEN Jun, et al. Crack-free GaN grown by MOCVD on Si(111)[J]. Chinese Journal of Semiconductors, 2004, 25(4): 410-414.
12. GU S, ZHANG R, SHI Y, et al. Hydride vapor phase epitaxy growth of GaN on sapphire with ZnO buffer layers[J]. Appl Phys A, 2002, 74(4): 537-540.
13. LU Jian-guo, WANG Lei, YE Zhi-zhen, et al. Advance in research on application of ZnO thin films[J]. Journal of Functional Materials and Devices, 2002, 8(3): 303-308. (in Chinese)
14. LI Yang, XUE Cheng-shan, WANG Cui-mei, et al. Fabrication of hexagonal gallium nitride films on silicon (111) substrates[J]. Rare Metals, 2003, 22(3): 221-225.
15. YONG Sun, Miyasato T, Kirimoto K. Characterization of excess carbon in cubic SiC films by infrared absorption[J]. J Appl Phys, 1999, 85(6): 3377-3379.
16. 3 deposited on Si substrates with electrophoresis[J]. International Journal of Modern Physics B, 2002, 16(28-29): 4267-4270.
17. ZHANG Hao-xiang, YE Zhi-zhen, LU Huan-ming, et al. Epitaxial growth of GaN film on Si substrate[J]. Chinese Journal of Semiconductors, 1999, 20(2): 143-146. (in Chinese)
18. CHEN Zhi-zhong, ZHU Jian-ming, SHEN Bo, et al. Microstructure and optical properties of GaN films on sapphire substrates[J]. Material and Design, 2000, 21: 579-582.
19. 3 substrate and its characteristics[J]. Chinese Journal of Semiconductors, 1999, 20(8): 639-643. (in Chinese)