SCOPUS 정보 검색 플랫폼 - 논문 보기

메뉴 건너뛰기

Applied Physics A: Materials Science and Processing

Volumn 74, Issue 4, 2002, Pages 537-540

Hydride vapor phase epitaxy growth of GaN on sapphire with ZnO buffer layers

(6) Gu, S a Zhang, R a Shi, Y a Zheng, Y a Zhang, L b Kuech, T F b

a NANJING UNIVERSITY (China)

b University of Wisconsin Madison (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COALESCENCE; MORPHOLOGY; SAPPHIRE; SUBSTRATES; VAPOR PHASE EPITAXY; ZINC OXIDE;

BUFFER LAYERS;

GALLIUM NITRIDE;

EID: 0036535038 PISSN: 09478396 EISSN: None Source Type: Journal
DOI: 10.1007/s003390100933 Document Type: Article

Times cited : (11)

References (19)

1
- 0026244249
- (1991) Jpn. J. Appl. Phys. , vol.30
- Nakamura, S.¹

2
- 0030563477
- (1996) J. Cryst. Growth , vol.163 , pp. 86
- Akasaki, I.¹ Amano, H.²

3
- 0000369868
- (1998) Appl. Phys. Lett. , vol.72 , pp. 2972
- Munkholm, A.¹ Thompson, C.² Foster, C.M.³ Eastman, J.A.⁴ Auciello, O.⁵ Stephenson, G.B.⁶ Fini, P.⁷ DenBaars, S.⁸ Speck, J.S.⁹

4
- 0001663823
- (1999) Jpn. J. Appl. Phys. , vol.38 , pp. 649
- Ito, T.¹ Sumiya, M.² Takano, Y.³ Ohtsuka, K.⁴ Fuke, S.⁵

5
- 0000874390
- (1999) J. Appl. Phys. , vol.82 , pp. 4877
- Sugiera, L.¹ Itaya, K.² Nishio, J.³ Fujimoto, H.⁴ Kokubun, Y.⁵

6
- 51249161389
- (1995) J. Electron. Mater. , vol.24 , pp. 1519
- Hersee, S.D.¹ Ramer, J.² Zeng, K.³ Kranenberg, C.⁴ Malloy, K.⁵ Banas, M.⁶ Goorsky, M.⁷

7
- 33847084706
- Gallium nitride and related materials II
- (1997) Symp. Maten Res. Soc. , pp. 69
- Ishida, M.¹ Hashimoto, T.² Takayama, T.³ Imafuji, O.⁴ Yuri, M.⁵ Yoshikawa, A.⁶ Itoh, K.⁷ Terakoshi, Y.⁸ Sugino, T.⁹ Shirafuji, J.¹⁰

8
- 0008741456
- III-V nitrides
- (1997) Symp. Mater. Res. Soc. , pp. 59
- Byun, D.¹ Jeong, J.² Lee, J.I.³ Kim, B.⁴ Yoo, J.B.⁵ Kum, D.W.⁶

9
- 0030109381
- (1996) J. Appl. Phys. , vol.35 , pp. 285
- Keller, S.¹ Kapolnek, D.² Keller, B.³ Wu, Y.⁴ Heying, B.⁵ DenBaars, S.P.⁶

10
- 0032090756
- (1998) J. Cryst. Growth , vol.189-190 , pp. 270
- Uchida, K.¹ Nishida, K.² Kondo, M.³ Munekata, H.⁴

11
- 0026414655
- (1991) J. Cryst. Growth , vol.115 , pp. 628
- Hiramatus, K.¹ Itoh, S.² Amano, H.³ Akasaki, O.⁴ Kuwano, N.⁵ Shiraishi, T.⁶ Ohi, K.⁷

12
- 0031150308
- (1997) J. Cryst. Growth , vol.178 , pp. 147
- Molnar, R.J.¹ Gotz, W.² Romano, L.T.³ Johnson, J.M.⁴

13
- 0001579414
- (1992) Appl. Phys. Lett. , vol.61 , pp. 2688
- Detchprohm, T.¹ Hiramatsu, K.² Amano, H.³ Akasaki, I.⁴

14
- 0030409786
- (1996) Mater. Res. Soc. Symp. Proc. , vol.423 , pp. 221
- Molnar, R.J.¹ Maki, P.² Aggarwal, R.³ Laiu, Z.L.⁴ Brown, E.R.⁵ Melngailis, I.⁶ Götz, W.⁷ Romano, L.T.⁸ Johnson, N.M.⁹

15
- 0032474163
- (1998) J. Cryst. Growth , vol.187 , pp. 340
- Ueda, T.¹ Huang, T.F.² Spruytte, S.³ Lee, H.⁴ Yuri, M.⁵ Itoh, K.⁶ Baba, T.⁷ Harris Jr., J.S.⁸

16
- 0008787354
- unpublished
- Gu, S.¹ Zhang, R.² Sun, J.³ Zhang, L.⁴ Kuech, T.F.⁵

17
- 0000216465
- (1998) Appl. Phys. Lett. , vol.73 , pp. 3090
- Golan, Y.¹ Wu, X.H.² Speck, J.S.³ Vando, R.P.⁴ Phanse, V.M.⁵

18
- 0001739480
- (1998) Appl. Phys. Lett. , vol.73 , pp. 487
- Zywietz, T.¹ Negebauer, J.² Scheffler, M.³

19
- 0642279688
- (1997) Phys. Rev. B , vol.55 , pp. 9571
- Mattila, T.¹ Nieminen, R.M.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.