Epitaxial growth of GaN film on Si substrate

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 20, Issue 2, 1999, Pages 143-146

  Zhang, Haoxiang ^a   Ye, Zhizhen ^a   Lu, Huanming ^a   Zhao, Binghui ^a   Que, Duanlin ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; NITRIDES;

NOVEL VACUUM REACTION METHOD; SEMICONDUCTING FILMS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033069041     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (9)