Size, shape, and ordering of SiGe/Si(001) islands grown by means of liquid phase epitaxy under far-nonequilibrium growth conditions

Applied Physics Letters

Volumn 86, Issue 14, 2005, Pages 1-3

  Hanke, M ^a   Boeck, T ^b   Gerlitzke, A K ^b   Syrowatka, F ^c   Heyroth, F ^c   Kohler R ^d  

^a MARTIN LUTHER UNIVERSITY HALLE WITTENBERG   (Germany)

^b LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

^c Interdisziplinares Zentrum F M   (Germany)

^d HUMBOLDT UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GROWTH CONDITIONS; POSITIONAL CORRELATION; STRANSKI-KRASTANOV (SK) ISLANDS; X-RAY MICROANALYSIS;

CONCENTRATION (PROCESS); CORRELATION THEORY; ENERGY DISPERSIVE SPECTROSCOPY; GERMANIUM; LIQUID PHASE EPITAXY; SCANNING ELECTRON MICROSCOPY; SELF ASSEMBLY; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 17444426060     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1895476     Document Type: Article

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