Lateral correlation of SiGe Stranski-Krastanow islands on silicon as probed by high resolution x-ray diffraction

Journal of Applied Physics

Volumn 96, Issue 4, 2004, Pages 1959-1962

  Hanke, M ^a,b   Schmidbauer, M ^a   Kohler R ^a  

^a HUMBOLDT UNIVERSITY   (Germany)

^b MARTIN LUTHER UNIVERSITY HALLE WITTENBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; COMPUTER SIMULATION; ENERGY DISSIPATION; FOURIER TRANSFORMS; LIQUID PHASE EPITAXY; SCANNING ELECTRON MICROSCOPY; SCATTERING; SEMICONDUCTOR QUANTUM DOTS; STATISTICAL METHODS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

ELASTIC ENERGY; GRAZING INCIDENCE DIFFRACTION (GID); POWER SPECTRUM; SPATIAL RESOLUTION;

SILICON COMPOUNDS;

EID: 4344586959     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1772883     Document Type: Article

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