Island chain formation during liquid phase epitaxy of SiGe on silicon

Applied Physics Letters

Volumn 83, Issue 24, 2003, Pages 4927-4929

  Hanke, M ^a   Raidt, H ^a   Kohler R ^a   Wawra, H ^b  

^a HUMBOLDT UNIVERSITY   (Germany)

^b LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CURRENT DENSITY; FINITE ELEMENT METHOD; LIQUID PHASE EPITAXY; NUCLEATION; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS;

FINITE ELEMENT STRAIN ENERGY; ISLAND CHAIN FORMATION; LATERAL ORDERING; POST GROWTH ATOMIC FORCE MICROSCOPY; SILICON GERMANIDE; STRANSKI KRASTANOW MODE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0347133433     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1633028     Document Type: Article

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