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Applied Physics A: Materials Science and Processing

Volumn 80, Issue 8, 2005, Pages 1769-1773

Comparative study of pulsed laser deposited HfO2 and Hf-aluminate films for high-k gate dielectric applications

(2) Zhu, J a Liu, Z G a

a NANJING UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; CRYSTALLIZATION; HAFNIUM COMPOUNDS; PERMITTIVITY; PULSED LASER DEPOSITION; THERMODYNAMIC STABILITY; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

CRYSTALLIZATION TEMPERATURE; DIFFRACTION PEAKS; GATE DIELECTRIC FILMS; HF-ALUMINATE FILMS;

DIELECTRIC FILMS;

EID: 17444410029 PISSN: 09478396 EISSN: None Source Type: Journal
DOI: 10.1007/s00339-003-2479-8 Document Type: Article

Times cited : (10)

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