SCOPUS 정보 검색 플랫폼

Volumn 213, Issue 2, 1992, Pages 257-264

Study of sputtered HfO2 thin films on silicon

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001716014 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/0040-6090(92)90291-I Document Type: Article

Times cited : (68)

References (28)

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- High-performance tantalum oxide capacitors fabricated by a novel reoxidation scheme
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3
- 0000650906
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- Fukumoto¹ Morita² Osaka³

9
- 84975449253
- Preparation and Properties of Sputtered Hafnium and Anodic HfO[sub 2] Films
- (1970) Journal of The Electrochemical Society , vol.117 , pp. 396
- Thomas¹

11
- 0003680984
- 2nd edn., L.I. Maissel, R. Glang, McGraw-Hill, New York
- (1970) Handbook of Thin Film Technology , pp. 12-13
- Campbell¹

12
- 0003680984
- 2nd edn., L.I. Maissel, Glang, McGraw-Hill, New York
- (1970) Handbook of Thin Film Technology , pp. 16-21
- Harrop¹ Campbell²

19
- 0004005306
- 2nd edn., Wiley, New York
- (1981) Physics of Semiconductor Devices
- Sze¹

20
- 0016418108
- Application of high-rate E×B or magnetron sputtering in the metallization of semiconductor devices
- (1976) Journal of Vacuum Science and Technology , vol.13 , pp. 157
- Wilson¹ Terry²

27
- 84912499619
- Electrical Properties of Vapor-Deposited Silicon Nitride and Silicon Oxide Films on Silicon
- (1968) Journal of The Electrochemical Society , vol.115 , pp. 300
- Deal¹ Fleming² Castro³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.