Study of data retention for nanocrystal Flash memories

IEEE International Reliability Physics Symposium Proceedings

Volumn 2003-January, Issue , 2003, Pages 506-512

  Monzio Compagnoni, C ^a   Ielmini, D ^a   Spinelli, A S ^b   Lacaita, A L ^a   Previtali, C ^a   Gerardi, C ^c  

^a POLITECNICO DI MILANO   (Italy)

^b UNIVERSITY OF INSUBRIA   (Italy)

^c STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

DYNAMIC RANDOM ACCESS STORAGE; FLASH MEMORY; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; NANOCRYSTALS; RELIABILITY; SEMICONDUCTOR STORAGE;

LATERAL TUNNELING; MEMORY RELIABILITY; MINIMUM THICKNESS; NANOCRYSTAL FLASH MEMORY; NANOCRYSTAL MEMORY; RETENTION DEGRADATION; STRESS-INDUCED LEAKAGE CURRENT; TUNNEL OXIDE THICKNESS;

DIGITAL STORAGE;

EID: 84955299556     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2003.1197800     Document Type: Conference Paper

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