Nano-bridging: A massively parallel self-assembly technique for interconnecting nanowire sensors

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5593, Issue , 2004, Pages 101-111

  Islam, M Saif ^a,b   Sharma, Shashank ^b   Kamins, Theodore I ^b   Williams, R Stanley ^b  

^a University of California Davis   (United States)

^b HEWLETT PACKARD LABORATORIES   (United States)

Author keywords

Interfacing nanowires; Nano bridges; Nanodevice; Nanowire; Nanowire sensors

Indexed keywords

CATALYSIS; ELECTRODES; FIELD EFFECT TRANSISTORS; HEAT TREATMENT; INTERFACES (MATERIALS); NANOSTRUCTURED MATERIALS; NANOTECHNOLOGY; SCANNING ELECTRON MICROSCOPY; SENSORS; SILICON; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; SYNTHESIS (CHEMICAL);

INTERFACING NANOWIRES; NANO-BRIDGES; NANODEVICES; NANOWIRE; NANOWIRE SENSORS;

SELF ASSEMBLY;

EID: 17044405178     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.569745     Document Type: Conference Paper

References (58)

1. M. Yazawa, M. Koguchi and K. Hiruma, Appl. Phys. Lett. 58 (1991) 1080.
2. T. J. Trentler, et. al. Science 270, (1995) 1791.
3. Y. Cui, and C. M. Lieber, Science 291, (2001) 851; X. Duan and C. M. Lieber, Adv. Material, 12 (2000) 298; X. F. Duan, Y. Huang, Y. Cui, J. F. Wang, and C. M. Lieber, Nature 409, (2001) 66; J. F Wang, M. S. Gudiksen, X. F. Duan, Y. Cui, and C. M. Lieber, Science 293, (2001) 1455; X. Duan and C. M. Lieber, J. Am. Chem. Soc. 122 (2000) 188; Y. Cui, et. al. Appl. Phys. Lett. 78 (2001) 2214; A. M. Morales, and C. M. Lieber, Science, 279 (1998) 208.
4. Y. Cui, and C. M. Lieber, Science 291, (2001) 851; X. Duan and C. M. Lieber, Adv. Material, 12 (2000) 298; X. F. Duan, Y. Huang, Y. Cui, J. F. Wang, and C. M. Lieber, Nature 409, (2001) 66; J. F Wang, M. S. Gudiksen, X. F. Duan, Y. Cui, and C. M. Lieber, Science 293, (2001) 1455; X. Duan and C. M. Lieber, J. Am. Chem. Soc. 122 (2000) 188; Y. Cui, et. al. Appl. Phys. Lett. 78 (2001) 2214; A. M. Morales, and C. M. Lieber, Science, 279 (1998) 208.
5. Y. Cui, and C. M. Lieber, Science 291, (2001) 851; X. Duan and C. M. Lieber, Adv. Material, 12 (2000) 298; X. F. Duan, Y. Huang, Y. Cui, J. F. Wang, and C. M. Lieber, Nature 409, (2001) 66; J. F Wang, M. S. Gudiksen, X. F. Duan, Y. Cui, and C. M. Lieber, Science 293, (2001) 1455; X. Duan and C. M. Lieber, J. Am. Chem. Soc. 122 (2000) 188; Y. Cui, et. al. Appl. Phys. Lett. 78 (2001) 2214; A. M. Morales, and C. M. Lieber, Science, 279 (1998) 208.
6. Y. Cui, and C. M. Lieber, Science 291, (2001) 851; X. Duan and C. M. Lieber, Adv. Material, 12 (2000) 298; X. F. Duan, Y. Huang, Y. Cui, J. F. Wang, and C. M. Lieber, Nature 409, (2001) 66; J. F Wang, M. S. Gudiksen, X. F. Duan, Y. Cui, and C. M. Lieber, Science 293, (2001) 1455; X. Duan and C. M. Lieber, J. Am. Chem. Soc. 122 (2000) 188; Y. Cui, et. al. Appl. Phys. Lett. 78 (2001) 2214; A. M. Morales, and C. M. Lieber, Science, 279 (1998) 208.
7. Y. Cui, and C. M. Lieber, Science 291, (2001) 851; X. Duan and C. M. Lieber, Adv. Material, 12 (2000) 298; X. F. Duan, Y. Huang, Y. Cui, J. F. Wang, and C. M. Lieber, Nature 409, (2001) 66; J. F Wang, M. S. Gudiksen, X. F. Duan, Y. Cui, and C. M. Lieber, Science 293, (2001) 1455; X. Duan and C. M. Lieber, J. Am. Chem. Soc. 122 (2000) 188; Y. Cui, et. al. Appl. Phys. Lett. 78 (2001) 2214; A. M. Morales, and C. M. Lieber, Science, 279 (1998) 208.
8. Y. Cui, and C. M. Lieber, Science 291, (2001) 851; X. Duan and C. M. Lieber, Adv. Material, 12 (2000) 298; X. F. Duan, Y. Huang, Y. Cui, J. F. Wang, and C. M. Lieber, Nature 409, (2001) 66; J. F Wang, M. S. Gudiksen, X. F. Duan, Y. Cui, and C. M. Lieber, Science 293, (2001) 1455; X. Duan and C. M. Lieber, J. Am. Chem. Soc. 122 (2000) 188; Y. Cui, et. al. Appl. Phys. Lett. 78 (2001) 2214; A. M. Morales, and C. M. Lieber, Science, 279 (1998) 208.
9. Y. Cui, and C. M. Lieber, Science 291, (2001) 851; X. Duan and C. M. Lieber, Adv. Material, 12 (2000) 298; X. F. Duan, Y. Huang, Y. Cui, J. F. Wang, and C. M. Lieber, Nature 409, (2001) 66; J. F Wang, M. S. Gudiksen, X. F. Duan, Y. Cui, and C. M. Lieber, Science 293, (2001) 1455; X. Duan and C. M. Lieber, J. Am. Chem. Soc. 122 (2000) 188; Y. Cui, et. al. Appl. Phys. Lett. 78 (2001) 2214; A. M. Morales, and C. M. Lieber, Science, 279 (1998) 208.
10. Y. Wu and P. Yang, Chem. Mater., 12 (2000) 605; Y. Wu, B. Messer and P. Yang, Adv. Mater. 13 (2001) 1487.
11. Y. Wu and P. Yang, Chem. Mater., 12 (2000) 605; Y. Wu, B. Messer and P. Yang, Adv. Mater. 13 (2001) 1487.
12. Y. Li, G. W. Meng, L. D. Zhang and F. Philipp, Appl. Phys. Lett. 76 (2000) 2011.
13. M. H. Huang, et. al. Adv. Mater. 13 (2001) 113.
14. J. Kong, et. al. Appl. Phys. A 69 (1990) 305.
15. Y. C. Choi, et. al. Adv. Mater, 12 (2000) 746.
16. J. Hu, et. al. Acc. Chem Res. 32 (199) 435.
17. Y. F. Zhang, et. al. AppL Phys. Lett. 72 (1998) 1835.
18. M. Zheng, Appl. Phys. Lett. 79 (2001) 839.
19. C. Chen and C. Yeh, Adv. Material, 12 (2000) 738.
20. T. I. Kamins, X. Li, R. Stanley Williams, and X. Liu, Nano Letters 4 (2004) 503; T. I. Kamins and R. Stanley Williams, mstnews 3/03, 12 (2003); T. I. Kamins and R. Stanley Williams, mstnews 3/03 (2003)12; Q. Tang, X. Liu, T. I. Kamins, G. S. Solomon and J. S. Harris, Appl. Phys. Lett, 81 (2002) 2451; T. I. Kamins, R. Stanley Williams, D. P. Basile, T. Hesjedal, and J. S. Harris, J. Appl. Phys. 89, (2001) 1008.
21. T. I. Kamins, X. Li, R. Stanley Williams, and X. Liu, Nano Letters 4 (2004) 503; T. I. Kamins and R. Stanley Williams, mstnews 3/03, 12 (2003); T. I. Kamins and R. Stanley Williams, mstnews 3/03 (2003)12; Q. Tang, X. Liu, T. I. Kamins, G. S. Solomon and J. S. Harris, Appl. Phys. Lett, 81 (2002) 2451; T. I. Kamins, R. Stanley Williams, D. P. Basile, T. Hesjedal, and J. S. Harris, J. Appl. Phys. 89, (2001) 1008.
22. T. I. Kamins, X. Li, R. Stanley Williams, and X. Liu, Nano Letters 4 (2004) 503; T. I. Kamins and R. Stanley Williams, mstnews 3/03, 12 (2003); T. I. Kamins and R. Stanley Williams, mstnews 3/03 (2003)12; Q. Tang, X. Liu, T. I. Kamins, G. S. Solomon and J. S. Harris, Appl. Phys. Lett, 81 (2002) 2451; T. I. Kamins, R. Stanley Williams, D. P. Basile, T. Hesjedal, and J. S. Harris, J. Appl. Phys. 89, (2001) 1008.
23. T. I. Kamins, X. Li, R. Stanley Williams, and X. Liu, Nano Letters 4 (2004) 503; T. I. Kamins and R. Stanley Williams, mstnews 3/03, 12 (2003); T. I. Kamins and R. Stanley Williams, mstnews 3/03 (2003)12; Q. Tang, X. Liu, T. I. Kamins, G. S. Solomon and J. S. Harris, Appl. Phys. Lett, 81 (2002) 2451; T. I. Kamins, R. Stanley Williams, D. P. Basile, T. Hesjedal, and J. S. Harris, J. Appl. Phys. 89, (2001) 1008.
24. T. I. Kamins, X. Li, R. Stanley Williams, and X. Liu, Nano Letters 4 (2004) 503; T. I. Kamins and R. Stanley Williams, mstnews 3/03, 12 (2003); T. I. Kamins and R. Stanley Williams, mstnews 3/03 (2003)12; Q. Tang, X. Liu, T. I. Kamins, G. S. Solomon and J. S. Harris, Appl. Phys. Lett, 81 (2002) 2451; T. I. Kamins, R. Stanley Williams, D. P. Basile, T. Hesjedal, and J. S. Harris, J. Appl. Phys. 89, (2001) 1008.
25. M. Saif Islam, S. Sharma, T. I. Kamins, and R. Stanley Williams, Nanotechnology 15, (2004) L5; M. Saif Islam, et. al., SPIE Conference on Nano-Sensors: Material and Devices at Optics East. Oct 2004; M. Saif Islam, et. al. MRS Spring Meeting, Boston, MA, Nov 29, 2003; T. I. Kamins, et. al. IEEE-NANO, Aug 17-19, Munich, Germany 2004; M. Saif Islam, et. al. NATO Advanced Research Workshop: Science and Tech. of Semiconductor-on-insulator Structures Devices Operating in a Harsh Environment, 25-29 April 2004, Kyiv, Ukraine.
26. M. Saif Islam, S. Sharma, T. I. Kamins, and R. Stanley Williams, Nanotechnology 15, (2004) L5; M. Saif Islam, et. al., SPIE Conference on Nano-Sensors: Material and Devices at Optics East. Oct 2004; M. Saif Islam, et. al. MRS Spring Meeting, Boston, MA, Nov 29, 2003; T. I. Kamins, et. al. IEEE-NANO, Aug 17-19, Munich, Germany 2004; M. Saif Islam, et. al. NATO Advanced Research Workshop: Science and Tech. of Semiconductor-on-insulator Structures Devices Operating in a Harsh Environment, 25-29 April 2004, Kyiv, Ukraine.
27. M. Saif Islam, S. Sharma, T. I. Kamins, and R. Stanley Williams, Nanotechnology 15, (2004) L5; M. Saif Islam, et. al., SPIE Conference on Nano-Sensors: Material and Devices at Optics East. Oct 2004; M. Saif Islam, et. al. MRS Spring Meeting, Boston, MA, Nov 29, 2003; T. I. Kamins, et. al. IEEE-NANO, Aug 17-19, Munich, Germany 2004; M. Saif Islam, et. al. NATO Advanced Research Workshop: Science and Tech. of Semiconductor-on-insulator Structures Devices Operating in a Harsh Environment, 25-29 April 2004, Kyiv, Ukraine.
28. M. Saif Islam, S. Sharma, T. I. Kamins, and R. Stanley Williams, Nanotechnology 15, (2004) L5; M. Saif Islam, et. al., SPIE Conference on Nano-Sensors: Material and Devices at Optics East. Oct 2004; M. Saif Islam, et. al. MRS Spring Meeting, Boston, MA, Nov 29, 2003; T. I. Kamins, et. al. IEEE-NANO, Aug 17-19, Munich, Germany 2004; M. Saif Islam, et. al. NATO Advanced Research Workshop: Science and Tech. of Semiconductor-on-insulator Structures Devices Operating in a Harsh Environment, 25-29 April 2004, Kyiv, Ukraine.
29. M. Saif Islam, S. Sharma, T. I. Kamins, and R. Stanley Williams, Nanotechnology 15, (2004) L5; M. Saif Islam, et. al., SPIE Conference on Nano-Sensors: Material and Devices at Optics East. Oct 2004; M. Saif Islam, et. al. MRS Spring Meeting, Boston, MA, Nov 29, 2003; T. I. Kamins, et. al. IEEE-NANO, Aug 17-19, Munich, Germany 2004; M. Saif Islam, et. al. NATO Advanced Research Workshop: Science and Tech. of Semiconductor-on-insulator Structures Devices Operating in a Harsh Environment, 25-29 April 2004, Kyiv, Ukraine.
30. Z. W. Pan, Z. R. Dai and Z. L. Wang, Science 291 (2001) 1947.
31. Y. Cui, X. Duan, J. Hu and C. M. Lieber, J. Phys. Chem. B 104 (2001) 5213.
32. F. Seker, M. Meeker, T. F. Kuech and A. B. Ellis, Chem. Rev. 100 (2000) 2504.
33. M. Huang, S. S. Mao H. Feich, H Yan, Y. Wu, H. Kind, E. R. Weber, R. E. Russo and P. Yang, Science, 292 (2001) 1897; S. S. Mao, R. E. Russo and P. Yang, Proc. SPIE, 4608 (2001) 225.
34. M. Huang, S. S. Mao H. Feich, H Yan, Y. Wu, H. Kind, E. R. Weber, R. E. Russo and P. Yang, Science, 292 (2001) 1897; S. S. Mao, R. E. Russo and P. Yang, Proc. SPIE, 4608 (2001) 225.
35. Y. Xia, P. Yang, Y. Sun, Y. Wu, B. Mayers, B. Gates, Y. Yin, F. Kim, H. Yan, Adv. Mater. 15 (2003) 353.
36. Y. Cui, Q. Q. Wei, H. K. Park, C. M. Lieber, Science 293 (2001) 1289.
37. M. Law, H. Kind, F. Kim, B. Messer, P. Yang, Angew. Chem., Int. Ed. 41 (2002) 2405.
38. C. Li, D. H. Zhang, X. L. Liu, S. Han, T. Tang, J. Han, C. W. Zhou, Appl. Phys. Lett. 82 (2003) 1613.
39. Z. Li, et. al. Nano Letters, 4 (2004) 245.
40. S. S. Mao, Int. J. of Nanotechnology, 1 (2004) 42.
41. R. S. Wagner, in Whisker Technology, Edited By A. P. Levitt, Wiley, New York (1970) pp. 47-119.
42. B. J. Ohlsson, M. T. Bjork, M. H. Magnusson, K. Deppert, L. Samuelson, L. R. Wallenberg, Appl. Phys. Lett. 79 (2001) 3335.
43. M. T. Bjork, B. J. Ohlsson, T. Sass, A. I. Persson, C. Thelander, M. H. Magnusson, K Deppert and L.R. Wallwnberg, Nano Lett. 2 (2002) 87; M. T. Bjork, B. J. Ohlsson, C. Thelander, A. I. Persson, K. Deppert, L. R. Wallenberg, L. Samuelson, Appl. Phys. Lett. 81 (2002) 4458.
44. M. T. Bjork, B. J. Ohlsson, T. Sass, A. I. Persson, C. Thelander, M. H. Magnusson, K Deppert and L.R. Wallwnberg, Nano Lett. 2 (2002) 87; M. T. Bjork, B. J. Ohlsson, C. Thelander, A. I. Persson, K. Deppert, L. R. Wallenberg, L. Samuelson, Appl. Phys. Lett. 81 (2002) 4458.
45. B. Lei, C. Li, D. Zhang, T. Tang, and C. Zhou, Applied Physics A 79, 439 (2004); C. Li, D. Zhang, S. Han, X. Liu, and C. Zhou, J. of Phys. Chem. B 107, 12451 (2003); Z. Liu, D. Zhang, S. Han, C. Li, T. Tang, W. Jin, X. Liu, B. Lei, and C. Zhou, Advanced Materials 15, 1754 (2003); D. Zhang, C. Li, X. Liu, S. Han, T. Tang, and C. Zhou, Appl. Phys. Lett. 83, 1845 (2003); C. Li, D. Zhang, X. Liu, S. Han, T. Tang, J. Han and C. Zhou, Appl. Phys. Lett. 82, 1613 (2003); S. Han, W. Jin, T. Tang, C. Li, D. Zhang, X. Liu, J. Han, and C. Zhou, J. Mater. Res. 18, 245 (2003).
46. B. Lei, C. Li, D. Zhang, T. Tang, and C. Zhou, Applied Physics A 79, 439 (2004); C. Li, D. Zhang, S. Han, X. Liu, and C. Zhou, J. of Phys. Chem. B 107, 12451 (2003); Z. Liu, D. Zhang, S. Han, C. Li, T. Tang, W. Jin, X. Liu, B. Lei, and C. Zhou, Advanced Materials 15, 1754 (2003); D. Zhang, C. Li, X. Liu, S. Han, T. Tang, and C. Zhou, Appl. Phys. Lett. 83, 1845 (2003); C. Li, D. Zhang, X. Liu, S. Han, T. Tang, J. Han and C. Zhou, Appl. Phys. Lett. 82, 1613 (2003); S. Han, W. Jin, T. Tang, C. Li, D. Zhang, X. Liu, J. Han, and C. Zhou, J. Mater. Res. 18, 245 (2003).
47. B. Lei, C. Li, D. Zhang, T. Tang, and C. Zhou, Applied Physics A 79, 439 (2004); C. Li, D. Zhang, S. Han, X. Liu, and C. Zhou, J. of Phys. Chem. B 107, 12451 (2003); Z. Liu, D. Zhang, S. Han, C. Li, T. Tang, W. Jin, X. Liu, B. Lei, and C. Zhou, Advanced Materials 15, 1754 (2003); D. Zhang, C. Li, X. Liu, S. Han, T. Tang, and C. Zhou, Appl. Phys. Lett. 83, 1845 (2003); C. Li, D. Zhang, X. Liu, S. Han, T. Tang, J. Han and C. Zhou, Appl. Phys. Lett. 82, 1613 (2003); S. Han, W. Jin, T. Tang, C. Li, D. Zhang, X. Liu, J. Han, and C. Zhou, J. Mater. Res. 18, 245 (2003).
48. B. Lei, C. Li, D. Zhang, T. Tang, and C. Zhou, Applied Physics A 79, 439 (2004); C. Li, D. Zhang, S. Han, X. Liu, and C. Zhou, J. of Phys. Chem. B 107, 12451 (2003); Z. Liu, D. Zhang, S. Han, C. Li, T. Tang, W. Jin, X. Liu, B. Lei, and C. Zhou, Advanced Materials 15, 1754 (2003); D. Zhang, C. Li, X. Liu, S. Han, T. Tang, and C. Zhou, Appl. Phys. Lett. 83, 1845 (2003); C. Li, D. Zhang, X. Liu, S. Han, T. Tang, J. Han and C. Zhou, Appl. Phys. Lett. 82, 1613 (2003); S. Han, W. Jin, T. Tang, C. Li, D. Zhang, X. Liu, J. Han, and C. Zhou, J. Mater. Res. 18, 245 (2003).
49. B. Lei, C. Li, D. Zhang, T. Tang, and C. Zhou, Applied Physics A 79, 439 (2004); C. Li, D. Zhang, S. Han, X. Liu, and C. Zhou, J. of Phys. Chem. B 107, 12451 (2003); Z. Liu, D. Zhang, S. Han, C. Li, T. Tang, W. Jin, X. Liu, B. Lei, and C. Zhou, Advanced Materials 15, 1754 (2003); D. Zhang, C. Li, X. Liu, S. Han, T. Tang, and C. Zhou, Appl. Phys. Lett. 83, 1845 (2003); C. Li, D. Zhang, X. Liu, S. Han, T. Tang, J. Han and C. Zhou, Appl. Phys. Lett. 82, 1613 (2003); S. Han, W. Jin, T. Tang, C. Li, D. Zhang, X. Liu, J. Han, and C. Zhou, J. Mater. Res. 18, 245 (2003).
50. B. Lei, C. Li, D. Zhang, T. Tang, and C. Zhou, Applied Physics A 79, 439 (2004); C. Li, D. Zhang, S. Han, X. Liu, and C. Zhou, J. of Phys. Chem. B 107, 12451 (2003); Z. Liu, D. Zhang, S. Han, C. Li, T. Tang, W. Jin, X. Liu, B. Lei, and C. Zhou, Advanced Materials 15, 1754 (2003); D. Zhang, C. Li, X. Liu, S. Han, T. Tang, and C. Zhou, Appl. Phys. Lett. 83, 1845 (2003); C. Li, D. Zhang, X. Liu, S. Han, T. Tang, J. Han and C. Zhou, Appl. Phys. Lett. 82, 1613 (2003); S. Han, W. Jin, T. Tang, C. Li, D. Zhang, X. Liu, J. Han, and C. Zhou, J. Mater. Res. 18, 245 (2003).
51. Y. Cui et. al. in Nanowires and Nanobelts Materials, Propoerties and Devices I, Edited By Z. L Wang, Kluwer Academic Publishers, Boston (2003) pp. 3-65.
52. L. Samuelson et. al. in Nanowires and Nanobelts Materials, Propoerties and Devices I, Edited By Z. L Wang, Kluwer Academic Publishers, Boston (2003) pp. 69-87.
53. A. Amma and T. E. Mallouk, in Nanowires and Nanobelts Materials, Propoerties and Devices I, Edited By Z. L Wang, Kluwer Academic Publishers, Boston (2003) pp. 235-249.
54. Z. L. Wang in Nanowires and Nanobelts Materials, Propoerties and Devices II, Edited By Z. L Wang, Kluwer Academic Publishers, Boston (2003) pp. 3-16.
55. S-W. Chung, J-Y. Yu and J. R. Heath, Appl. Phys. Lett. 76 (2002) 2068; J. Y. Yu et. al. J. Phys. Chem B, 2000 (2000) 11864;
56. S-W. Chung, J-Y. Yu and J. R. Heath, Appl. Phys. Lett. 76 (2002) 2068; J. Y. Yu et. al. J. Phys. Chem B, 2000 (2000) 11864;
57. J. E. Spainer, J. J. Urban, L. Ouyang, W. Soo and H. Park in Nanowires and Nanobelts Materials, Propoerties and Devices II, Edited By Z. L Wang, Kluwer Academic Publishers, Boston (2003) pp. 83-91.
58. J. Westwater, D. P. Gosain, S. Tomiya, S. Usui, and H. Ruda, J. Vac. Sci. Technol. B 15, 554 (1997).