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Volumn 89, Issue 1-3, 2002, Pages 410-414
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On the origin of the kinetic growth instability of homoepitaxy on Si(001)
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Author keywords
Ehrlich Schwoebel barrier; Kinetic Monte Carlo simulations; Scanning tunneling microscopy; Si homoepitaxy; Step bunching
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Indexed keywords
COMPUTER SIMULATION;
EPITAXIAL GROWTH;
GROWTH KINETICS;
HIGH TEMPERATURE EFFECTS;
MONTE CARLO METHODS;
SCANNING TUNNELING MICROSCOPY;
SEMICONDUCTOR GROWTH;
HOMOEPITAXIAL GROWTH;
SEMICONDUCTING SILICON;
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EID: 0037074834
PISSN: 09215107
EISSN: None
Source Type: Journal
DOI: 10.1016/S0921-5107(01)00844-3 Document Type: Conference Paper |
Times cited : (23)
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References (26)
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