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Volumn 89, Issue 1-3, 2002, Pages 410-414

On the origin of the kinetic growth instability of homoepitaxy on Si(001)

Author keywords

Ehrlich Schwoebel barrier; Kinetic Monte Carlo simulations; Scanning tunneling microscopy; Si homoepitaxy; Step bunching

Indexed keywords

COMPUTER SIMULATION; EPITAXIAL GROWTH; GROWTH KINETICS; HIGH TEMPERATURE EFFECTS; MONTE CARLO METHODS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR GROWTH;

EID: 0037074834     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(01)00844-3     Document Type: Conference Paper
Times cited : (23)

References (26)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.