Direct imaging of nano pn junctions and their bulk electronic properties with the use of scanning tunneling microscopy

Solid-State Electronics

Volumn 42, Issue 7-8, 1998, Pages 1075-1078

  Fukutome, Hidenobu ^a   Takano, Keizo ^a   Hasegawa, Shigehiko ^a   Nakashima, Hisao ^a   Aoyama, Takayuki ^b   Arimoto, Hiroshi ^b  

^a OSAKA UNIVERSITY   (Japan)

^b FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; ELECTRIC POTENTIAL; MIS DEVICES; NANOSTRUCTURED MATERIALS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES;

BIAS VOLTAGE;

SEMICONDUCTOR JUNCTIONS;

EID: 0032118330     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(97)00304-3     Document Type: Article

References (6)

1. Johnson, M. B. and Halbout, J.-M., J. Vac. Sci. Technol. B, 1992, 10, 508.
2. Fukutome, H., Takano, K., Yasuda, H., Maehashi, K., Hasegawa, S. and Nakashima, H., In press.
3. Hosaka, S., Hosoki, S., Takata, K., Horiuchi, K. and Natsuaki, N., Appl. Phys. Lett., 1988, 53, 487.
4. Fukutome, H., Takano, K., Hasegawa, S., Nakashima, H., Aoyama, T. and Arimoto, H., In press.
5. Morita, Y. and Tokumoto, H., Appl. Phys. Lett., 1995, 67, 2654.
6. Sze, S. M., Physics of Semiconductor Devices, 2nd ed. Wiley-Interscience, New York, 1981.