Gate insulating layer impact on the extension profile of the sub-50 nm p-MOSFET

Extended Abstracts of the 3rd International Workshop on Junction Technology, IWJT 2002

Volumn , Issue , 2002, Pages 43-46

  Fukutome, H ^a   Arimoto, H ^a   Watanabe, S ^a   Ohta, H ^a   Hori, M ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84963628516     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IWJT.2002.1225198     Document Type: Conference Paper

References (8)

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