Visualization of the depleted layer in nanoscaled pn junctions on Si(001) surfaces with the use of scanning tunneling microscopy

Applied Surface Science

Volumn 144-145, Issue , 1999, Pages 554-563

  Fukutome, Hidenobu ^a   Hasegawa, Shigehiko ^a   Takano, Keizo ^a   Nakashima, Hisao ^a   Aoyama, Takayuki ^b   Arimoto, Hiroshi ^b  

^a OSAKA UNIVERSITY   (Japan)

^b FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Depletion layer; Hydrogen termination; MIS; Pn junction; STM; XPS

Indexed keywords

ELECTRIC POTENTIAL; ELECTRONIC PROPERTIES; HYDROGEN; IMAGE PROCESSING; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; SPECTROSCOPY; SURFACES; X RAY PHOTOELECTRON SPECTROSCOPY;

BIAS VOLTAGE; CURRENT IMAGING TUNNELING SPECTROSCOPY; DEPLETION LAYER; METAL INSULATOR SEMICONDUCTOR STRUCTURE MODEL; NANOSCALED PN JUNCTIONS; SCANNING TUNNELING SPECTROSCOPY;

SEMICONDUCTOR JUNCTIONS;

EID: 0032624773     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(98)00865-4     Document Type: Article

References (7)

1. G. Binnig, H. Rohrer, C. Gerber, E. Weibel, Phys. Rev. Lett. 50 (1983) 120.
2. H. Fukutome, K. Takano, H. Yasuda, K. Maehashi, S. Hasegawa, H. Nakashima, Appl. Surf. Sci. 130-132 (1998) 346.
3. K.-J. Chao, A.R. Smith, A.J. McDonald, D.-L. Kwong, B.G. Streetman, C.-K. Shin, J. Vac. Sci. Technol. B 16 (1998) 453.
4. H. Fukutome, K. Takano, S. Hasegawa, H. Nakashima, T. Aoyama, H. Arimoto, Extended Abstracts of the 1997 International Conference on Solid State Devices and Materials, p. 472.
5. H. Fukutome, K. Takano, S. Hasegawa, H. Nakashima, T. Aoyama, H. Arimoto, Solid-State Electron., in press.
6. S.M. Sze, Physics of Semiconductor Devices, 2nd edn., Wiley-Interscience, New York, 1981.
7. Y. Morita, H. Tokumoto, Appl. Phys. Lett. 67 (1995) 2654.