Anomalous diffusion in the extension region of nanoscale MOSFETs

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2001, Pages 67-70

  Fukutome, Hidenobu ^a   Aoyama, Takayuki ^a   Arimoto, Hiroshi ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHEMICAL VAPOR DEPOSITION; DIFFUSION IN SOLIDS; GATES (TRANSISTOR); INTERFACES (MATERIALS); MATHEMATICAL MODELS; SCANNING TUNNELING MICROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES;

CURRENT IMAGING TUNNELING SPECTROSCOPY; INVERSE MODELING; NANOSCALE MOSFETS;

MOSFET DEVICES;

EID: 0035718609     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)