Quantum-mechanically corrected variational principle for metal-oxide-semiconductor devices, leading to a deep sub-0.1 micron capacitor model

Journal of Applied Physics

Volumn 95, Issue 4, 2004, Pages 2063-2072

  Gunther, Norman G ^a   Mutlu, Ayhan A ^b   Rahman, Mahmud ^a  

^a Department of Computer Science and Engineering   (United States)

^b INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CAPACITANCE; CARRIER CONCENTRATION; COMPUTER SIMULATION; PERMITTIVITY; POISSON EQUATION; QUANTUM THEORY; TEMPERATURE; THRESHOLD VOLTAGE;

DEPLETION CAPACITANCE; ELECTRIC CHARGE DENSITY; ELECTROSTATIC POTENTIAL; METAL OXIDE SEMICONDUCTOR INTERFACE CHARGE CONFINEMENT; OXIDE CAPACITANCE; QUANTUM MECHANICAL EFFECT; VARIATIONAL QUANTUM MECHANICAL MODEL;

MOS CAPACITORS;

EID: 1542366577     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1641959     Document Type: Article

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