Fringe field and quantum mechanical effects on capacitance characteristics of sub-0.1 micron MOS devices

Device Research Conference - Conference Digest, DRC

Volumn 2003-January, Issue , 2003, Pages 53-54

  Gunther, N G ^a   Mutlu, A A ^a   Rahman, M ^a  

^a SANTA CLARA UNIVERSITY   (United States)

Author keywords

Capacitance voltage characteristics; Closed form solution; Doping; Electrostatics; Fluctuations; MOS capacitors; MOS devices; Quantum capacitance; Quantum mechanics; Semiconductor process modeling

Indexed keywords

CAPACITANCE; DOPING (ADDITIVES); ELECTROSTATICS; MOS DEVICES; QUANTUM THEORY; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DOPING;

CAPACITANCE VOLTAGE CHARACTERISTIC; CLOSED FORM SOLUTIONS; FLUCTUATIONS; QUANTUM CAPACITANCE; SEMICONDUCTOR PROCESS MODELING;

MOS CAPACITORS;

EID: 3142722097     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2003.1226868     Document Type: Conference Paper

References (3)

1. "A Novel Variational Approach for Modeling Sub-0.1 Micron MOS Devices Including Quantum Mechanical Interface Charge Confinement Effects", Norman Gunther, Ayhan Mutlu, and M. Rahman, DRC2002, Santa Barbara CA June 24-26, 2002.
2. Feynman, R.P., R.B. Leighton, and M. Sands "The Feynman Lectures on Physics," Vol. II, Ch. 19, Addison Wesley, 1964
3. "Carrier Transport Near the Si/SiO2 Interface of a MOSFET" Haensch, W., Vogelsang, Th., Kircher, R., and Orlowski, M. J., Solid State Electronics, 37, No. 10, p 839, Pergammon, 1989