A simple variational technique for estimating quantum mechanical charge redistribution effects in deep sub-micron MOS devices

2001 International Semiconductor Device Research Symposium, ISDRS 2001 - Proceedings

Volumn , Issue , 2001, Pages 94-97

  Gunther, N G ^a   Mutlu, A A ^b   Rahman, M ^a  

^a Santa Clara University   (United States)

^b INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

METALS; MOS DEVICES; OXIDE SEMICONDUCTORS; QUANTUM THEORY; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DOPING; THRESHOLD VOLTAGE; VARIATIONAL TECHNIQUES;

CHARGE CONFINEMENT; CHARGE REDISTRIBUTION EFFECTS; DEEP SUB-MICRON; DOPING CONCENTRATION; METAL OXIDE SEMICONDUCTOR; QUANTUM MECHANICAL; VARIATIONAL METHODS;

SEMICONDUCTING SILICON;

EID: 84961843588     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISDRS.2001.984447     Document Type: Conference Paper

References (4)

1. A. Asenov, G. Slavcheva, A.R. Brown, J. H. Davies, and S. Saini, "Quantum Mechanical Enhancement of the Random Dopant Induced Threshold Voltage Fluctuations and Lowering in Sub 0.1 micron MOSFETs," IEDM Technical Digest. International, 1999, Page(s): 535-538.
2. M. J. van Dort, P. H. Woerlee, A. J. Walker, C. A. H. Juffermans, and H. Lifka, "Quantum-Mechanical Threshold Voltage Shifts of MOSFETs Caused by High Levels of Channel Doping," IEDM Technical Digest. International, 1991, Page(s): 495-495.
3. R.P. Feynman, Leighton R.B., Sands M., "The Feynman Lectures on Physics", Vol. II, Ch. 19, Addison-Wesley, 1977.
4. 2 Interface of a MOSFET," Solid State Electronics, Vol. 32, No. 10, 1989, Page(s) 839-849.