A novel variational approach for modeling sub-0.1 micron MOS devices including Quantum Mechanical interface charge confinement effects

Device Research Conference - Conference Digest, DRC

Volumn 2002-January, Issue , 2002, Pages 59-60

  Gunther, N G ^a   Mutlu, A A ^a   Rahman, M ^a  

^a Santa Clara University   (United States)

Author keywords

Capacitance; Doping; Electrostatics; Fluctuations; Matter waves; MOS devices; Poisson equations; Quantum mechanics; Semiconductor process modeling; Threshold voltage

Indexed keywords

CAPACITANCE; DOPING (ADDITIVES); ELECTROSTATICS; MOS DEVICES; POISSON EQUATION; QUANTUM THEORY; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DOPING; THRESHOLD VOLTAGE;

DEEP SUB-MICRON; FLUCTUATIONS; INTERFACE CHARGE; MATTER WAVES; QUANTUM MECHANICAL; SEMICONDUCTOR PROCESS MODELING; THREEDIMENSIONAL (3-D); VARIATIONAL APPROACHES;

SEMICONDUCTOR DEVICE MODELS;

EID: 3142691345     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2002.1029510     Document Type: Conference Paper

References (4)

1. Feynman, R.P., R.B. Leighton, and M. Sands "The Feynman Lectures on Physics," Vol. II, Ch. 19, Addison Wesley, 1964.
2. "Carrier Transport Near the Si/SiO2 Interface of a MOSFET" Haensch, W., Vogelsang, Th., Kircher, R., and Orlowski, M. J., Solid State Electronics, 37, No. 10, p 839, Pergammon, 1989.
3. "Quantum Mechanical Enhancement of Random Dopant Induced Threshold Voltage Fluctuations and Lowering in Sub 0.1 μm MOSFETs," Asenov, A., et al., IEDM 1999.
4. "Random Dopant Induced Threshold Voltage Lowering and Fluctuations in Sub 0.1 μm MOSFETs: A 3-D "Atomistic" Simulation Study," Asenov, A., IEEE Transactions on Electron Devices, 45, No. 18, 1998.